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| www..com PD - 97073B IRGB4060DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * * * * * * * * * * Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 C 5s SCSOA Square RBSOA 100% of The Parts Tested for 4X Rated Current (ILM) Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 8.0A, TC = 100C tsc > 5s, Tjmax = 175C n-channel C VCE(on) typ. = 1.55V Benefits * High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses * Rugged Transient Performance for Increased Reliability * Excellent Current Sharing in Parallel Operation * Low EMI E G C TO-220AB G C E Gate Collector Emitter Absolute Maximum Ratings Parameter VCES IC@ TC = 25C IC@ TC = 100C ICM ILM IF@TC=25C IF@TC=100C IFM VGE PD @ TC =25 PD @ TC =100 TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 16 8 32 32 16 8 32 20 30 99 50 -55 to + 175 300 (0.063 in. (1.6mm) from case) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT e Junction-to-Case - Diode e Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount e Weight 0.5 80 1.44 Min. Typ. Max. 1.51 3.66 Units C/W g 1 www.irf.com 9/22/06 www..com IRGB4060DPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES V(BR)CES/TJ Min. Typ. Max. Units 600 -- -- -- -- 4.0 -- -- -- -- -- -- -- -18 5.6 1 400 1.80 1.30 -- -- 0.3 1.55 2.00 1.95 -- -- 1.85 -- -- 6.5 -- -- 25 -- 2.80 -- 100 nA V V Conditions VGE = 0V,Ic =100 A Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage o V/C VGE = 0V, Ic = 250 A ( 25 -175 C ) IC = 8A, VGE = 15V, TJ = 25C f Ref.Fig f CT6 VCE(on) VGE(th) VGE(th)/TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V IC = 8A, VGE = 15V, TJ = 150C IC = 8A, VGE = 15V, TJ = 175C VCE = VGE, IC = 250 A 5,6,7,9, 10 ,11 9,10,11,12 gfe ICES VFM IGES o mV/C VCE = VGE, IC = 250 A ( 25 -175 C ) S VCE = 50V, IC = 8A, PW =80s A A V VGE = 0V,VCE = 600V VGE = 0v, VCE = 600V, TJ =175C IF = 8A IF = 8A, TJ = 175C VGE = 20 V 8 Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min. Typ. Max. Units -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 19 5 8 70 145 215 30 15 95 20 165 240 405 28 17 117 35 535 45 15 29 7 12 115 195 310 39 21 106 26 -- -- -- -- -- -- -- -- -- -- pF VGE = 0V VCC = 30V f = 1Mhz ns J ns J nC IC = 8A VCC = 400V VGE = 15V Conditions Ref.Fig 24 CT1 IC = 8A, VCC = 400V, VGE = 15V RG = 47, L=1mH, LS= 150nH, TJ = 25C Energy losses include tail and diode reverse recovery CT4 IC = 8A, VCC = 400V RG = 47, L=1mH, LS= 150nH TJ = 25C IC = 8A, VCC = 400V, VGE = 15V RG = 47, L=1mH, LS= 150nH, TJ = 175C Energy losses include tail and diode reverse recovery 13,15 CT4 WF1,WF2 14,16 CT4 WF1,WF2 CT4 IC = 8A, VCC = 400V RG = 47, L=1mH, LS= 150nH TJ = 175C 22 TJ = 175C, IC = 32A FULL SQUARE VCC = 480V, Vp =600V RG = 47, VGE = +15V to 0V SCSOA Erec trr Irr Short Circuit Safe Operating Area Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current 5 165 60 14 s J ns A VCC = 400V, Vp =600V RG = 47, VGE = +15V to 0V TJ = 175 C VCC = 400V, IF = 8A VGE = 15V, Rg = 47, L=1mH, LS=150nH o 4 CT2 22, CT3 WF4 17,18,19 20,21 WF3 Notes: VCC = 80% (VCES), VGE = 15V, L = 100 H, RG = 47 . Pulse width limited by max. junction temperature. R is measured at TJ approximately 90C Refer to AN-1086 for guidelines for measuring V(BR)CES safely 2 www.irf.com www..com IRGB4060DPBF 18 16 14 12 IC (A) 120 100 80 Ptot (W) 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 TC (C) 60 40 20 0 0 20 40 60 80 100 120 140 160 180 TC (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 100 Fig. 2 - Power Dissipation vs. Case Temperature 10 s 10 IC (A) IC A) 1000 100 s 1 1ms DC 0.1 1 10 VCE (V) 100 10 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA, TC = 25C; TJ 175C 30 25 20 ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175C; VCE = 15V 30 25 20 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 15 10 5 0 0 2 4 VCE (V) 6 8 15 10 5 0 0 2 4 VCE (V) 6 8 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s www.irf.com 3 www..com IRGB4060DPBF 30 VGE = 18V 25 20 ICE (A) 80 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V IF (A) 70 60 50 40 30 20 -40C 25C 175C 15 10 5 0 0 2 4 VCE (V) 6 8 10 0 0.0 1.0 2.0 VF (V) 3.0 4.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 175C; tp = 80s 20 18 16 14 VCE (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 80s 20 18 16 ICE = 4.0A ICE = 16A VCE (V) 12 10 8 6 4 2 0 5 10 ICE = 8.0A 14 12 10 8 6 4 2 0 ICE = 4.0A ICE = 16A ICE = 8.0A 15 VGE (V) 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40C 20 18 16 14 VCE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25C 35 30 TJ = 25C TJ = 175C ICE = 4.0A ICE = 16A 25 ICE (A) 12 10 8 6 4 2 0 5 10 ICE = 8.0A 20 15 10 5 0 15 VGE (V) 20 0 5 VGE (V) 10 15 Fig. 11 - Typical VCE vs. VGE TJ = 175C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s 4 www.irf.com www..com IRGB4060DPBF 500 450 400 Swiching Time (ns) 1000 350 Energy (J) 100 tdOFF tF tdON 300 250 200 150 100 50 0 0 EOFF EON 10 tR 1 5 10 I C (A) 15 20 0 5 10 15 20 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 1mH; VCE = 400V, RG = 47; VGE = 15V. 350 300 250 1000 Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L=1mH; VCE= 400V RG= 47; VGE= 15V EOFF Swiching Time (ns) Energy (J) tdOFF 100 200 150 100 50 0 0 25 50 EON tdON tR tF 10 75 100 125 0 25 50 75 100 125 RG () Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 1mH; VCE = 400V, ICE = 8A; VGE = 15V 30 25 RG () Fig. 16- Typ. Switching Time vs. RG TJ = 175C; L=1mH; VCE= 400V ICE= 8A; VGE= 15V 25 R G =10 RG =22 RG =47 RG = 100 IRR (A) 20 20 IRR (A) 15 15 10 10 5 5 0 0 5 10 15 20 0 0 25 50 75 100 125 IF (A) RG () Fig. 17 - Typical Diode IRR vs. IF TJ = 175C Fig. 18 - Typical Diode IRR vs. RG TJ = 175C; IF = 8.0A www.irf.com 5 www..com IRGB4060DPBF 25 1400 10 1200 16A 20 22 47 100 8.0A 1000 IRR (A) 15 QRR (nC) 800 600 10 4.0A 400 5 200 0 0 500 1000 0 0 500 1000 1500 Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 8A; TJ = 175C 500 450 400 350 diF /dt (A/s) diF /dt (A/s) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175C 18 16 14 Time (s) 12 10 8 6 4 0 5 10 15 20 80 70 60 Energy (J) 250 200 150 100 50 0 10 22 47 100 40 30 20 10 8 10 12 14 VGE (V) 16 18 I F (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 175C 1000 Fig. 22- Typ. VGE vs Short Circuit Time VCC=400V, TC =25C 16 Cies 14 12 300V 400V Capacitance (pF) 100 VGE (V) 10 8 6 Coes 10 Cres 4 2 1 0 20 40 60 80 100 0 0 5 10 15 20 VCE (V) Q G, Total Gate Charge (nC) Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 8A, L=600H 6 www.irf.com Current (A) 300 50 www..com IRGB4060DPBF 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 J J 1 1 R1 R1 2 R2 R2 R3 R3 C 2 3 3 Ri (C/W) (sec) 0.01 Ci= i/Ri Ci= i/Ri 0.555579 0.000216 0.590565 0.00117 0.365255 0.009076 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 D = 0.50 Thermal Response ( Z thJC ) 1 0.20 0.10 0.05 0.1 0.02 0.01 J J 1 R1 R1 2 R2 R2 R3 R3 C 3 Ri (C/W) (sec) 1 2 3 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= i/Ri Ci= i/Ri 0.821094 0.000233 1.913817 0.001894 0.926641 0.014711 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 www..com IRGB4060DPBF L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement 8 www.irf.com www..com IRGB4060DPBF 500 400 300 VCE (V) 200 100 5% VCE 90% ICE 25 20 15 VCE (V) 500 400 tr 300 200 100 0 EON Loss -100 11.70 90% test t TEST 25 20 15 10 5 0 -5 12.10 tf 5% ICE 10 5 0 10% test current 5% VCE 0 EOFF Loss -100 -0.40 0.10 0.60 -5 1.10 11.90 Time (s) Time(s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4 15 10 5 0 -5 -10 -15 -20 -0.05 10% Peak IRR 500 100 VCE 80 60 40 20 0 -20 10.00 ICE (A) QRR 400 tRR 300 VCE (V) 200 100 0 -100 -5.00 ICE IRR (A) Peak IRR 0.05 time (S) 0.15 0.00 5.00 time (S) WF.3- Typ. Reverse Recovery Waveform @ TJ = 175C using CT.4 WF.4- Typ. Short Circuit Waveform @ TJ = 25C using CT.3 www.irf.com 9 www..com IRGB4060DPBF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN T HE AS S EMBLY LINE "C" Note: "P" in ass embly line pos ition indicates "Lead - Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/06 10 www.irf.com |
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